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Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92
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2N5551

DigiKey Part Number
5399-2N5551-ND
Manufacturer
Manufacturer Product Number
2N5551
Description
160V 625MW 80@10MA,5V 600MA NPN
Manufacturer Standard Lead Time
4 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bag
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
300MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
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In-Stock: 5 280
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All prices are in ZAR
Bag
QuantityUnit PriceExt Price
1R1,85000R1,85
10R1,09200R10,92
100R0,66880R66,88
500R0,48060R240,30
1 000R0,41960R419,60
2 000R0,36767R735,34
5 000R0,31128R1 556,40
10 000R0,27626R2 762,60
50 000R0,21468R10 734,00
Manufacturers Standard Package