Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
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2N5551BU

DigiKey Part Number
2N5551BU-ND
Manufacturer
Manufacturer Product Number
2N5551BU
Description
TRANS NPN 160V 0.6A TO-92-3
Manufacturer Standard Lead Time
33 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
Datasheet
 Datasheet
EDA/CAD Models
2N5551BU Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Mfr
Power - Max
625 mW
Packaging
Bulk
Frequency - Transition
100MHz
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
600 mA
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Voltage - Collector Emitter Breakdown (Max)
160 V
Supplier Device Package
TO-92-3
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Base Product Number
Current - Collector Cutoff (Max)
50nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (3)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
ZTX455Diodes Incorporated4 126ZTX455-NDR1,08000Similar
ZTX696BDiodes Incorporated5 202ZTX696B-NDR1,31000Similar
ZTX696BSTZDiodes Incorporated0ZTX696BSTZ-NDR0,33881Similar
In-Stock: 337 296
Check for Additional Incoming Stock
All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R4,58000R4,58
10R2,81400R28,14
100R1,75060R175,06
500R1,28924R644,62
1 000R1,13987R1 139,87
2 000R1,01357R2 027,14
5 000R0,87659R4 382,95
10 000R0,79176R7 917,60
50 000R0,64305R32 152,50
Manufacturers Standard Package