Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
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2N5551BU

DigiKey Part Number
2N5551BU-ND
Manufacturer
Manufacturer Product Number
2N5551BU
Description
TRANS NPN 160V 0.6A TO-92-3
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
Datasheet
 Datasheet
EDA/CAD Models
2N5551BU Models
Product Attributes
Type
Description
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Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
100MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
Product Questions and Answers

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In-Stock: 337 791
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All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R4,50000R4,50
10R2,76100R27,61
100R1,71790R171,79
500R1,26514R632,57
1 000R1,11855R1 118,55
2 000R0,99461R1 989,22
5 000R0,86019R4 300,95
10 000R0,77695R7 769,50
50 000R0,63103R31 551,50
Manufacturers Standard Package