Name: NTMFS4D2N10MDT1G
Brand: onsemi
SKU: 488-NTMFS4D2N10MDT1GTR-ND
Price: 51.7 ZAR
Availability: OutOfStock

NTMFS4D2N10MDT1G is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Renesas Electronics Corporation

In Stock: 0

Unit Price: R2,64730

Similar

Rohm Semiconductor

In Stock: 1 392

Unit Price: R14,32000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTMFS4D2N10MDT1G
DigiKey Part Number	488-NTMFS4D2N10MDT1GTR-ND - Tape & Reel (TR) 488-NTMFS4D2N10MDT1GCT-ND - Cut Tape (CT) 488-NTMFS4D2N10MDT1GDKR-ND - Digi-Reel®
Manufacturer	onsemi
Manufacturer Product Number	NTMFS4D2N10MDT1G
Description	N-CHANNEL SHIELDED GATE POWERTRE
Manufacturer Standard Lead Time	45 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 16.4A (Ta), 113A (Tc) 2.8W (Ta), 132W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	16.4A (Ta), 113A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 239µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 132W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads
Base Product Number	NTMFS4