Name: SISH536DN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISH536DN-T1-GE3TR-ND
Price: 18 ZAR
Availability: OutOfStock

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SISH536DN-T1-GE3
DigiKey Part Number	742-SISH536DN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISH536DN-T1-GE3CT-ND - Cut Tape (CT) 742-SISH536DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISH536DN-T1-GE3
Description	N-CHANNEL 30 V (D-S) MOSFET POWE
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 24.7A (Ta), 67.4A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 3.25mOhm @ 10A, 10V
Mfr Vishay Siliconix	Vgs(th) (Max) @ Id 2.2V @ 250µA
Series TrenchFET® Gen V	Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) +16V, -12V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 15 V
FET Type N-Channel	Power Dissipation (Max) 3.57W (Ta), 26.5W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 24.7A (Ta), 67.4A (Tc)	Supplier Device Package PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case PowerPAK® 1212-8SH