Name: SQJ414EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ414EP-T1_GE3TR-ND
Price: 22.35 ZAR
Availability: OutOfStock

SQJ414EP-T1_GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Vishay Siliconix

In Stock: 2 894

Unit Price: R22,35000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQJ414EP-T1_GE3
DigiKey Part Number	SQJ414EP-T1_GE3TR-ND - Tape & Reel (TR) SQJ414EP-T1_GE3CT-ND - Cut Tape (CT) SQJ414EP-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQJ414EP-T1_GE3
Description	MOSFET N-CH 30V 30A PPAK SO-8
Manufacturer Standard Lead Time	25 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet
EDA/CAD Models	SQJ414EP-T1_GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SQJ414