Name: SIR582DP-T1-RE3
Brand: Vishay Siliconix
SKU: 742-SIR582DP-T1-RE3TR-ND
Price: 41.1 ZAR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIR582DP-T1-RE3
DigiKey Part Number	742-SIR582DP-T1-RE3TR-ND - Tape & Reel (TR) 742-SIR582DP-T1-RE3CT-ND - Cut Tape (CT) 742-SIR582DP-T1-RE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIR582DP-T1-RE3
Description	N-CHANNEL 80 V (D-S) MOSFET POWE
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 28.9A (Ta), 116A (Tc) 5.6W (Ta), 92.5W (Tc) Surface Mount PowerPAK® SO-8
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen V
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	28.9A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3360 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	5.6W (Ta), 92.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8