N-Channel 600 V 7A (Tc) 78W (Tc) Through Hole TO-251AA
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SIHU7N60E-GE3

DigiKey Part Number
742-SIHU7N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHU7N60E-GE3
Description
MOSFET N-CH 600V 7A IPAK
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 7A (Tc) 78W (Tc) Through Hole TO-251AA
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
SIHU7
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In-Stock: 2 240
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R43,02000R43,02
10R27,72700R277,27
100R18,98180R1 898,18
500R15,24392R7 621,96
1 000R14,04226R14 042,26
3 000R12,51758R37 552,74
6 000R12,39295R74 357,70
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.