N-Channel 800 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
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SIHP24N80AE-GE3

DigiKey Part Number
742-SIHP24N80AE-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP24N80AE-GE3
Description
MOSFET N-CH 800V 21A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1836 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
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All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R77,63000R77,63
10R51,15100R511,51
100R36,11850R3 611,85
500R29,70410R14 852,05
1 000R27,64443R27 644,43
2 000R25,91320R51 826,40
5 000R25,22701R126 135,05
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.