N-Channel 500 V 19A (Tc) 179W (Tc) Through Hole TO-220AB
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SIHP20N50E-GE3

DigiKey Part Number
SIHP20N50E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHP20N50E-GE3
Description
MOSFET N-CH 500V 19A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 500 V 19A (Tc) 179W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP20N50E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP20
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In-Stock: 544
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R61,00000R61,00
10R39,89300R398,93
100R27,87450R2 787,45
500R22,74488R11 372,44
1 000R21,09658R21 096,58
2 000R19,95475R39 909,50
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.