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N-Channel 600 V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP12N60E-GE3

DigiKey Part Number
SIHP12N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP12N60E-GE3
Description
MOSFET N-CH 600V 12A TO220AB
Manufacturer Standard Lead Time
17 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP12N60E-GE3 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
147W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-220AB
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (29)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
SIHP12N60E-BE3Vishay Siliconix886742-SIHP12N60E-BE3-NDR75,91000Direct
AOT15S60LAlpha & Omega Semiconductor Inc.0785-1267-5-NDR31,79630Similar
AOT15S65LAlpha & Omega Semiconductor Inc.67785-1511-5-NDR85,30000Similar
AOT20N60LAlpha & Omega Semiconductor Inc.0785-1512-5-NDR34,97592Similar
FCP11N60onsemi1 602FCP11N60-NDR87,18000Similar
In-Stock: 0
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All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R59,55000R59,55
50R29,91440R1 495,72
100R27,03820R2 703,82
500R21,99672R10 998,36
1 000R20,37713R20 377,13
2 000R19,01574R38 031,48
5 000R17,79259R88 962,95
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.