N-Channel 600 V 8.4A (Tc) 156W (Tc) Through Hole TO-247AC
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SIHG186N60EF-GE3

DigiKey Part Number
742-SIHG186N60EF-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHG186N60EF-GE3
Description
MOSFET N-CH 600V 8.4A TO247AC
Manufacturer Standard Lead Time
25 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 8.4A (Tc) 156W (Tc) Through Hole TO-247AC
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
EF
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
193mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1081 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG186
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In-Stock: 32
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R77,12000R77,12
25R43,95600R1 098,90
100R36,02040R3 602,04
500R29,66480R14 832,40
1 000R27,62402R27 624,02
2 000R27,12145R54 242,90
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.