Name: SIHF12N65E-GE3
Brand: Vishay Siliconix
SKU: SIHF12N65E-GE3-ND
Price: 54.95 ZAR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHF12N65E-GE3
DigiKey Part Number	SIHF12N65E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHF12N65E-GE3
Description	MOSFET N-CH 650V 12A TO220
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1224 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack
Base Product Number	SIHF12

Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 870

Check for Additional Incoming Stock

Quantity

All prices are in ZAR

Tube