


SIHB11N80AE-GE3 | |
---|---|
DigiKey Part Number | 742-SIHB11N80AE-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB11N80AE-GE3 |
Description | MOSFET N-CH 800V 8A D2PAK |
Manufacturer Standard Lead Time | 20 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 8A (Tc) 78W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
EDA/CAD Models | SIHB11N80AE-GE3 Models |
Type | Description | Select All |
---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 804 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 78W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263 (D2PAK) | |
Package / Case | ||
Base Product Number |
Quantity | Unit Price | Ext Price |
---|---|---|
1 | R47,48000 | R47,48 |
10 | R32,73600 | R327,36 |
100 | R22,92760 | R2 292,76 |
500 | R18,24398 | R9 121,99 |
1 000 | R16,84961 | R16 849,61 |
2 000 | R15,67724 | R31 354,48 |
5 000 | R15,27206 | R76 360,30 |