SIHP23N60E-GE3
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IRF640PBF

DigiKey Part Number
IRF640PBF-ND
Manufacturer
Manufacturer Product Number
IRF640PBF
Description
MOSFET N-CH 200V 18A TO220AB
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRF640PBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
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In-Stock: 4 393
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All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R60,48000R60,48
50R30,39680R1 519,84
100R27,48710R2 748,71
500R22,38690R11 193,45
1 000R20,74834R20 748,34
2 000R19,47459R38 949,18
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.