N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
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IRF640PBF

DigiKey Part Number
IRF640PBF-ND
Manufacturer
Manufacturer Product Number
IRF640PBF
Description
MOSFET N-CH 200V 18A TO220AB
Manufacturer Standard Lead Time
31 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRF640PBF Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Packaging
Tube
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Type
Power Dissipation (Max)
125W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 2 211
Check for Additional Incoming Stock
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R61,03000R61,03
50R30,70640R1 535,32
100R27,76630R2 776,63
500R22,61450R11 307,25
1 000R20,95942R20 959,42
2 000R19,56809R39 136,18
5 000R18,38567R91 928,35
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.