Name: VS-4C10ET12T-M3
Brand: Vishay General Semiconductor - Diodes Division
SKU: 112-VS-4C10ET12T-M3-ND
Price: 81.67 ZAR
Availability: InStock

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VS-4C10ET12T-M3
DigiKey Part Number	112-VS-4C10ET12T-M3-ND
Manufacturer	Vishay General Semiconductor - Diodes Division
Manufacturer Product Number	VS-4C10ET12T-M3
Description	RECTIFIER, SILICON CARBIDE, 1200
Manufacturer Standard Lead Time	31 Weeks
Customer Reference
Detailed Description	Diode 1200 V 10A Through Hole TO-220AC
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Mfr	Vishay General Semiconductor - Diodes Division
Series	-
Packaging	Tube
Part Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 10 A
Speed	Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	80 µA @ 1200 V
Capacitance @ Vr, F	590pF @ 1V, 1MHz
Grade	-
Qualification	-
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	-55°C ~ 175°C