N-Channel 650 V 5.8A (Ta) 30W (Tc) Through Hole TO-220SIS
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N-Channel 650 V 5.8A (Ta) 30W (Tc) Through Hole TO-220SIS
TO-220-3 Full Pack

TK6A65W,S5X

DigiKey Part Number
TK6A65WS5X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK6A65W,S5X
Description
MOSFET N-CH 650V 5.8A TO220SIS
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 5.8A (Ta) 30W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
EDA/CAD Models
TK6A65W,S5X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK6A65
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In-Stock: 58
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R36,97000R36,97
50R17,95680R897,84
100R16,10830R1 610,83
500R12,86514R6 432,57
1 000R11,82229R11 822,29
2 000R10,94537R21 890,74
5 000R10,48150R52 407,50
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.