Name: TK4R3E06PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK4R3E06PLS1X-ND
Price: 42.05 ZAR
Availability: InStock

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TK4R3E06PL,S1X
DigiKey Part Number	TK4R3E06PLS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK4R3E06PL,S1X
Description	MOSFET N-CH 60V 80A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 80A (Tc) 87W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK4R3E06PL,S1X Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 500µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 48.2 nC @ 10 V
Series U-MOSIX-H	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 30 V
Part Status Active	Power Dissipation (Max) 87W (Tc)
FET Type N-Channel	Operating Temperature 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 80A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number TK4R3E06
Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 4.5V

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
DMTH6010SCT	Diodes Incorporated	50	DMTH6010SCTDI-5-ND	R38,12000	Similar
IXTP120N075T2	IXYS	14	IXTP120N075T2-ND	R96,53000	Similar

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TK4R3E06PL,S1X