N-Channel 100 V 90A (Tc) 126W (Tc) Through Hole TO-220
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TK40E10N1,S1X

DigiKey Part Number
TK40E10N1S1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK40E10N1,S1X
Description
MOSFET N CH 100V 90A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 90A (Tc) 126W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK40E10N1,S1X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVIII-H
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
126W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK40E10
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In-Stock: 6
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R52,26000R52,26
50R26,07980R1 303,99
100R23,54580R2 354,58
500R19,10246R9 551,23
1 000R17,67495R17 674,95
2 000R16,82501R33 650,02
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.