N-Channel 650 V 3A (Ta) 35W (Tc) Through Hole TO-220SIS
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TK3A65D(STA4,Q,M)

DigiKey Part Number
TK3A65D(STA4QM)-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK3A65D(STA4,Q,M)
Description
MOSFET N-CH 650V 3A TO220SIS
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 3A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVII
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.25Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK3A65
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In-Stock: 15
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R35,12000R35,12
50R16,99220R849,61
100R15,22950R1 522,95
500R12,13518R6 067,59
1 000R11,14004R11 140,04
2 000R10,30329R20 606,58
5 000R9,76733R48 836,65
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.