N-Channel 100 V 22A (Tc) 30W (Tc) Through Hole TO-220SIS
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N-Channel 100 V 22A (Tc) 30W (Tc) Through Hole TO-220SIS
TO-220-3 Full Pack

TK22A10N1,S4X

DigiKey Part Number
TK22A10N1S4X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK22A10N1,S4X
Description
MOSFET N-CH 100V 22A TO220SIS
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 22A (Tc) 30W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
EDA/CAD Models
TK22A10N1,S4X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVIII-H
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK22A10
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In-Stock: 75
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R37,30000R37,30
50R18,15500R907,75
100R16,28810R1 628,81
500R13,01436R6 507,18
1 000R11,96193R11 961,93
2 000R11,07686R22 153,72
5 000R10,62853R53 142,65
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.