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TK125N60Z1,S1F
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK17N65W,S1F

DigiKey Part Number
TK17N65WS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK17N65W,S1F
Description
MOSFET N-CH 650V 17.3A TO247
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-247
Datasheet
 Datasheet
EDA/CAD Models
TK17N65W,S1F Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK17N65
Product Questions and Answers

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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R94,97000R94,97
30R53,92533R1 617,76
120R44,49333R5 339,20
510R37,81780R19 287,08
1 020R37,36790R38 115,26
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.