Name: SSM6J214FE(TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: SSM6J214FE(TE85LFTR-ND
Price: 9.65 ZAR
Availability: InStock

P-Channel 30 V 3.6A (Ta) 500mW (Ta) Surface Mount ES6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SSM6J214FE(TE85L,F
DigiKey Part Number	SSM6J214FE(TE85LFTR-ND - Tape & Reel (TR) SSM6J214FE(TE85LFCT-ND - Cut Tape (CT) SSM6J214FE(TE85LFDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	SSM6J214FE(TE85L,F
Description	MOSFET P-CH 30V 3.6A ES6
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	P-Channel 30 V 3.6A (Ta) 500mW (Ta) Surface Mount ES6
Datasheet	Datasheet
EDA/CAD Models	SSM6J214FE(TE85L,F Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1.2V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 7.9 nC @ 4.5 V
Series U-MOSVI	Vgs (Max) ±12V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 15 V
Part Status Active	Power Dissipation (Max) 500mW (Ta)
FET Type P-Channel	Operating Temperature 150°C
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package ES6
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)	Package / Case SOT-563, SOT-666
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V	Base Product Number SSM6J214
Rds On (Max) @ Id, Vgs 50mOhm @ 3A, 10V