Name: RN2101MFV,L3XHF(CT
Brand: Toshiba Semiconductor and Storage
SKU: 264-RN2101MFVL3XHF(CTTR-ND
Price: 4.51 ZAR
Availability: InStock

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN2101MFV,L3XHF(CT
DigiKey Part Number	264-RN2101MFVL3XHF(CTTR-ND - Tape & Reel (TR) 264-RN2101MFVL3XHF(CT-ND - Cut Tape (CT) 264-RN2101MFVL3XHF(CTDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN2101MFV,L3XHF(CT
Description	TRANS PREBIAS PNP 50V 0.1A VESM
Manufacturer Standard Lead Time	52 Weeks
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistors Included	R1 and R2
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250 MHz
Power - Max	150 mW
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM
Base Product Number	RN2101

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In-Stock: 7 975

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Quantity

All prices are in ZAR

Tape & Reel (TR)

Quantity	Unit Price	Ext Price
8 000	R0,78956	R6 316,48
16 000	R0,71587	R11 453,92
24 000	R0,67830	R16 279,20
40 000	R0,63608	R25 443,20
56 000	R0,61107	R34 219,92
80 000	R0,58675	R46 940,00
200 000	R0,54156	R108 312,00