Name: RN1901FE,LXHF(CT
Brand: Toshiba Semiconductor and Storage
SKU: 264-RN1901FELXHF(CTTR-ND
Price: 6.72 ZAR
Availability: InStock

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN1901FE,LXHF(CT
DigiKey Part Number	264-RN1901FELXHF(CTTR-ND - Tape & Reel (TR) 264-RN1901FELXHF(CT-ND - Cut Tape (CT) 264-RN1901FELXHF(CTDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN1901FE,LXHF(CT
Description	TRANS PREBIAS 2NPN 50V 100MA ES6
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz
Power - Max	100mW
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Base Product Number	RN1901