Name: HN4C06J-BL(TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: HN4C06J-BL(TE85LFTR-ND
Price: 9 ZAR
Availability: OutOfStock

HN4C06J-BL(TE85L,F is out of stock and can be placed on backorder.

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2SC4207-GR(TE85L,F

Toshiba Semiconductor and Storage

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Unit Price: R5,56000

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Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Emitter 120V 100mA 100MHz 300mW Surface Mount SMV

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

HN4C06J-BL(TE85L,F
DigiKey Part Number	HN4C06J-BL(TE85LFTR-ND - Tape & Reel (TR) HN4C06J-BL(TE85LFCT-ND - Cut Tape (CT) HN4C06J-BL(TE85LFDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	HN4C06J-BL(TE85L,F
Description	TRANS 2NPN 120V 100MA SMV
Manufacturer Standard Lead Time	52 Weeks
Customer Reference
Detailed Description	Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Emitter 120V 100mA 100MHz 300mW Surface Mount SMV
EDA/CAD Models	HN4C06J-BL(TE85L,F Models

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays	DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Manufacturer Toshiba Semiconductor and Storage	Power - Max 300mW
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Frequency - Transition 100MHz
Part Status Active	Operating Temperature 150°C (TJ)
Transistor Type 2 NPN (Dual) Common Emitter	Mounting Type Surface Mount
Current - Collector (Ic) (Max) 100mA	Package / Case SC-74A, SOT-753
Voltage - Collector Emitter Breakdown (Max) 120V	Supplier Device Package SMV
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA	Base Product Number HN4C06
Current - Collector Cutoff (Max) 100nA (ICBO)