TSM60NB1R4CH C5G is Obsolete and no longer manufactured.
Available Substitutes:

Parametric Equivalent


Taiwan Semiconductor Corporation
In Stock: 0
Unit Price: R15,94700

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Rochester Electronics, LLC
In Stock: 18 925
Unit Price: R8,90612
Datasheet
N-Channel 600 V 3A (Tc) 28.4W (Tc) Through Hole TO-251 (IPAK)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TSM60NB1R4CH C5G

DigiKey Part Number
TSM60NB1R4CHC5G-ND
Manufacturer
Manufacturer Product Number
TSM60NB1R4CH C5G
Description
MOSFET N-CHANNEL 600V 3A TO251
Customer Reference
Detailed Description
N-Channel 600 V 3A (Tc) 28.4W (Tc) Through Hole TO-251 (IPAK)
EDA/CAD Models
TSM60NB1R4CH C5G Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
257.3 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
Base Product Number
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Obsolete
This product is no longer manufactured. View Substitutes