TO-247-3 HiP
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-247-3 HiP
TO-247-3

STW11NM80

DigiKey Part Number
497-4420-5-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
STW11NM80
Description
MOSFET N-CH 800V 11A TO247-3
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 11A (Tc) 150W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
EDA/CAD Models
STW11NM80 Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
MDmesh™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1630 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW11
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In-Stock: 597
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R114,03000R114,03
30R49,40767R1 482,23
120R47,10875R5 653,05
510R46,49810R23 714,03
1 020R45,79231R46 708,16
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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