TO-220-3
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R6011KNX

DigiKey Part Number
R6011KNX-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
R6011KNX
Description
MOSFET N-CH 600V 11A TO220FM
Customer Reference
Detailed Description
N-Channel 600 V 11A (Tc) 53W (Tc) Through Hole TO-220FM
Datasheet
 Datasheet
EDA/CAD Models
R6011KNX Models
Product Attributes
Type
Description
Select All
Category
Mfr
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
390mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
53W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Base Product Number
R6011
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In-Stock: 337
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Quantity
All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R45,40000R45,40
10R30,15400R301,54
100R20,71110R2 071,11
500R16,67146R8 335,73
1 000R14,98698R14 986,98
2 000R14,28148R28 562,96
5 000R13,71236R68 561,80
Manufacturers Standard Package