TO-220-3
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TO-220-3

R6009ENX

DigiKey Part Number
R6009ENX-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
R6009ENX
Description
MOSFET N-CH 600V 9A TO220FM
Customer Reference
Detailed Description
N-Channel 600 V 9A (Tc) 40W (Tc) Through Hole TO-220FM
Datasheet
 Datasheet
EDA/CAD Models
R6009ENX Models
Product Attributes
Type
Description
Select All
Category
Mfr
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Base Product Number
R6009
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In-Stock: 183
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Quantity
All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R78,33000R78,33
10R51,69500R516,95
100R39,57130R3 957,13
500R38,57208R19 286,04
1 000R27,66301R27 663,01
Manufacturers Standard Package