BSM120D12P2C005
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BSM120D12P2C005
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
ROHM's SiC Power and Gate Driver Solutions

BSM080D12P2C008

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BSM080D12P2C008-ND
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BSM080D12P2C008
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MOSFET 2N-CH 1200V 80A MODULE
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22 Weeks
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Mosfet Array 1200V (1.2kV) 80A (Tc) 600W Chassis Mount Module
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BSM080D12P2C008 Models
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Manufacturer
Rohm Semiconductor
Series
-
Packaging
Tray
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 13.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 10V
Power - Max
600W
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
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In-Stock: 9
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Tray
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1R5 523,76000R5 523,76
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.