N-Channel 100 V 58A (Tc) 167W (Tc) Through Hole TO-220
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NTP6412ANG

DigiKey Part Number
NTP6412ANGOS-ND
Manufacturer
onsemi
Manufacturer Product Number
NTP6412ANG
Description
MOSFET N-CH 100V 58A TO220AB
Manufacturer Standard Lead Time
18 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 58A (Tc) 167W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
NTP6412ANG Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
NTP6412
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In-Stock: 12
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Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R50,08000R50,08
50R24,84300R1 242,15
100R22,39970R2 239,97
500R18,11236R9 056,18
1 000R16,73477R16 734,77
2 000R15,57664R31 153,28
5 000R15,23074R76 153,70
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

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Ships from Rochester Electronics, LLC