Bipolar (BJT) Transistor NPN - Darlington 100 V 800 mA 125MHz 625 mW Through Hole TO-92-3
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MPSA29

DigiKey Part Number
MPSA29-ND
Manufacturer
onsemi
Manufacturer Product Number
MPSA29
Description
TRANS NPN DARL 100V 0.8A TO-92-3
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 800 mA 125MHz 625 mW Through Hole TO-92-3
Datasheet
 Datasheet
EDA/CAD Models
MPSA29 Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
625 mW
Frequency - Transition
125MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
MPSA29
Product Questions and Answers

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In-Stock: 9 905
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Quantity
All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R8,35000R8,35
10R5,17000R51,70
100R3,28810R328,81
500R2,47118R1 235,59
1 000R2,20724R2 207,24
2 000R1,98496R3 969,92
5 000R1,74402R8 720,10
10 000R1,59500R15 950,00
50 000R1,33405R66 702,50
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