Bipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE200G

DigiKey Part Number
MJE200GOS-ND
Manufacturer
Manufacturer Product Number
MJE200G
Description
TRANS NPN 40V 5A TO-126
Manufacturer Standard Lead Time
10 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126
Datasheet
 Datasheet
Product Attributes
Filter Similar Products
Show Empty Attributes
Category
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A, 1V
Mfr
Power - Max
15 W
Packaging
Bulk
Frequency - Transition
65MHz
Part Status
Active
Operating Temperature
-65°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
5 A
Package / Case
TO-225AA, TO-126-3
Voltage - Collector Emitter Breakdown (Max)
40 V
Supplier Device Package
TO-126
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 1 671
Check for Additional Incoming Stock
All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R21,11000R21,11
10R13,31800R133,18
100R8,79730R879,73
500R6,85396R3 426,98
1 000R6,22847R6 228,47
2 000R5,70214R11 404,28
5 000R5,13245R25 662,25
10 000R4,78047R47 804,70
Manufacturers Standard Package