Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
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KSD1616AGBU

DigiKey Part Number
KSD1616AGBU-ND
Manufacturer
Manufacturer Product Number
KSD1616AGBU
Description
TRANS NPN 60V 1A TO-92-3
Manufacturer Standard Lead Time
33 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Power - Max
750 mW
Frequency - Transition
160MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
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In-Stock: 20 987
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All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R8,67000R8,67
10R5,34600R53,46
100R3,40210R340,21
500R2,55948R1 279,74
1 000R2,28736R2 287,36
2 000R2,05825R4 116,50
5 000R1,80998R9 049,90
10 000R1,65638R16 563,80
50 000R1,38748R69 374,00
Manufacturers Standard Package