Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
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KSD1616AGBU

DigiKey Part Number
KSD1616AGBU-ND
Manufacturer
Manufacturer Product Number
KSD1616AGBU
Description
TRANS NPN 60V 1A TO-92-3
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Datasheet
 Datasheet
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Mfr
Power - Max
750 mW
Packaging
Bulk
Frequency - Transition
160MHz
Part Status
Active
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
1 A
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Voltage - Collector Emitter Breakdown (Max)
60 V
Supplier Device Package
TO-92-3
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
BCX38CDiodes Incorporated37 596BCX38C-NDR20,78000Similar
BCX38CSTZDiodes Incorporated35431-BCX38CSTZCT-NDR21,27000Similar
In-Stock: 20 880
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All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R8,83000R8,83
10R5,44800R54,48
100R3,46690R346,69
500R2,60828R1 304,14
1 000R2,33095R2 330,95
2 000R2,09748R4 194,96
5 000R1,84447R9 222,35
10 000R1,68795R16 879,50
50 000R1,41393R70 696,50
Manufacturers Standard Package