N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-247-3
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HUF75639G3

DigiKey Part Number
HUF75639G3FS-ND
Manufacturer
onsemi
Manufacturer Product Number
HUF75639G3
Description
MOSFET N-CH 100V 56A TO247-3
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
UltraFET™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
HUF75639
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In-Stock: 295
Factory Stock: 30 150
Check for Additional Incoming Stock
Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R74,95000R74,95
30R41,50600R1 245,18
120R34,14292R4 097,15
510R28,74241R14 658,63
1 020R26,77091R27 306,33
2 010R26,34031R52 944,02
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.