Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126
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BD682G

DigiKey Part Number
BD682GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
BD682G
Description
TRANS PNP DARL 100V 4A TO-126
Manufacturer Standard Lead Time
18 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126
Datasheet
 Datasheet
EDA/CAD Models
BD682G Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
BD682
Product Questions and Answers

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In-Stock: 1 233
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Quantity
All prices are in ZAR
Bulk
QuantityUnit PriceExt Price
1R25,88000R25,88
10R16,38400R163,84
100R10,91760R1 091,76
500R8,57038R4 285,19
1 000R7,81520R7 815,20
2 000R7,18002R14 360,04
5 000R6,49270R32 463,50
10 000R6,15867R61 586,70
Manufacturers Standard Package
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