TO-220
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTP8N65X2M

DigiKey Part Number
IXTP8N65X2M-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTP8N65X2M
Description
MOSFET N-CH 650V 4A TO220
Manufacturer Standard Lead Time
41 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Ultra X2
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
IXTP8
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In-Stock: 12
Factory Stock: 1 450
Check for Additional Incoming Stock
Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R55,63000R55,63
50R35,77260R1 788,63
100R33,96680R3 396,68
500R24,60548R12 302,74
1 000R24,43565R24 435,65
2 000R23,86775R47 735,50
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.