N-Channel 800 V 10A (Tc) 300W (Tc) Through Hole TO-220-3
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IXFP10N80P

DigiKey Part Number
IXFP10N80P-ND
Manufacturer
IXYS
Manufacturer Product Number
IXFP10N80P
Description
MOSFET N-CH 800V 10A TO220AB
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 10A (Tc) 300W (Tc) Through Hole TO-220-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
HiPerFET™, Polar
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
IXFP10
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In-Stock: 240
Factory Stock: 850
Check for Additional Incoming Stock
Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R117,46000R117,46
50R62,94780R3 147,39
100R57,68980R5 768,98
500R48,48358R24 241,79
1 000R48,16228R48 162,28
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.