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IXFH50N60X is Obsolete and no longer manufactured.
Available Substitutes:
MFR Recommended
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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
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Category | Vgs(th) (Max) @ Id 4.5V @ 4mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V |
Series | Vgs (Max) ±30V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 4660 pF @ 25 V |
Part Status Obsolete | Power Dissipation (Max) 660W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 600 V | Supplier Device Package TO-247 (IXTH) |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 73mOhm @ 25A, 10V |
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Substitutes (10)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IXFH60N65X2 | IXYS | 5 072 | 238-IXFH60N65X2-ND | R252,12000 | MFR Recommended |
| FCH070N60E | onsemi | 487 | FCH070N60EOS-ND | R148,07000 | Similar |
| IPW60R070CFD7XKSA1 | Infineon Technologies | 824 | 448-IPW60R070CFD7XKSA1-ND | R121,07000 | Similar |
| IPW60R080P7XKSA1 | Infineon Technologies | 10 080 | 448-IPW60R080P7XKSA1-ND | R107,82000 | Similar |
| SIHG47N65E-GE3 | Vishay Siliconix | 1 000 | 742-SIHG47N65E-GE3-ND | R158,70000 | Similar |
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Obsolete
