N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
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SPW35N60C3FKSA1

DigiKey Part Number
SPW35N60C3FKSA1-ND
Manufacturer
Manufacturer Product Number
SPW35N60C3FKSA1
Description
MOSFET N-CH 650V 34.6A TO247-3
Customer Reference
Detailed Description
N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
Datasheet
 Datasheet
EDA/CAD Models
SPW35N60C3FKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.9V @ 1.9mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
Part Status
Not For New Designs
Power Dissipation (Max)
313W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3-1
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
100mOhm @ 21.9A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (15)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
SIHG44N65EF-GE3Vishay Siliconix0SIHG44N65EF-GE3-NDR99,27200Direct
FCH077N65F-F085onsemi1 646FCH077N65F-F085-NDR193,71000Similar
FCH077N65F-F155onsemi0FCH077N65F-F155-NDR180,46000Similar
IXFH36N60PIXYS560IXFH36N60P-NDR260,63000Similar
IXFX48N60Q3IXYS38IXFX48N60Q3-NDR557,75000Similar
In-Stock: 240
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply View Substitutes
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R171,46000R171,46
30R101,30733R3 039,22
120R85,89250R10 307,10
510R74,60359R38 047,83
1 020R73,29728R74 763,23
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.