N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
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SPP11N60C3XKSA1

DigiKey Part Number
SPP11N60C3XKSA1-ND
Manufacturer
Manufacturer Product Number
SPP11N60C3XKSA1
Description
MOSFET N-CH 650V 11A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Datasheet
 Datasheet
EDA/CAD Models
SPP11N60C3XKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.9V @ 500µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
Part Status
Last Time Buy
Power Dissipation (Max)
125W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (12)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IPP60R360P7XKSA1Infineon Technologies1 296448-IPP60R360P7XKSA1-NDR42,70000MFR Recommended
AOT11S60LAlpha & Omega Semiconductor Inc.995785-1250-5-NDR58,90000Similar
FCP11N60Fonsemi2 037FCP11N60FFS-NDR72,15000Similar
IPP60R380E6XKSA1Rochester Electronics, LLC12 0002156-IPP60R380E6XKSA1-NDR25,19595Similar
IRF610LPBFVishay Siliconix0IRF610LPBF-NDR14,08453Similar
In-Stock: 2 008
Check for Additional Incoming Stock
Last Time Buy Date: 2026/09/30
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R69,70000R69,70
50R34,96680R1 748,34
100R31,60620R3 160,62
500R25,71458R12 857,29
1 000R23,82145R23 821,45
2 000R22,23027R44 460,54
5 000R20,50986R102 549,30
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.