IRF1010EZPBF Infineon Technologies | Single FETs, MOSFETs

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IRF1010EZPBF
DigiKey Part Number	IRF1010EZPBF-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRF1010EZPBF
Description	MOSFET N-CH 60V 75A TO220AB
Customer Reference
Detailed Description	N-Channel 60 V 75A (Tc) 140W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRF1010EZPBF Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 100µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Series HEXFET®	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 2810 pF @ 25 V
Part Status Obsolete	Power Dissipation (Max) 140W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25°C 75A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IRF1010
Rds On (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V

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Substitutes (6)

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