Name: IRF100PW219XKSA1
Brand: Infineon Technologies
SKU: 448-IRF100PW219XKSA1-ND
Price: 93.41 ZAR
Availability: InStock

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IRF100PW219XKSA1
DigiKey Part Number	448-IRF100PW219XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRF100PW219XKSA1
Description	TRENCH >=100V
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 33A (Ta), 203A (Tc) 3.8W (Ta), 341W (Tc) Through Hole PG-TO247-3-U06
Datasheet	Datasheet
EDA/CAD Models	IRF100PW219XKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	33A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	16000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 341W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-U06
Package / Case	TO-247-3