N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO247-3-41
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IPW65R420CFDFKSA2

DigiKey Part Number
448-IPW65R420CFDFKSA2-ND
Manufacturer
Manufacturer Product Number
IPW65R420CFDFKSA2
Description
MOSFET N-CH 650V 8.7A TO247-3
Customer Reference
Detailed Description
N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IPW65R420CFDFKSA2 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
31.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
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In-Stock: 265
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All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R52,60000R52,60
30R28,45467R853,64
120R23,12508R2 775,01
510R19,21059R9 797,40
1 020R17,78094R18 136,56
2 010R16,98466R34 139,17
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.