PG-TO220-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP60R199CPXKSA1

DigiKey Part Number
448-IPP60R199CPXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPP60R199CPXKSA1
Description
MOSFET N-CH 650V 16A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 16A (Tc) 139W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R199CPXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolMOS™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP60R199
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 368
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply View Substitutes
Quantity
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R70,36000R70,36
50R35,35320R1 767,66
100R32,77800R3 277,80
500R26,77208R13 386,04
1 000R24,92262R24 922,62
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.