N-Channel 650 V 16A (Tc) 139W (Tc) Through Hole PG-TO220-3
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IPP60R199CPXKSA1

DigiKey Part Number
448-IPP60R199CPXKSA1-ND
Manufacturer
Manufacturer Product Number
IPP60R199CPXKSA1
Description
MOSFET N-CH 650V 16A TO220-3
Customer Reference
Detailed Description
N-Channel 650 V 16A (Tc) 139W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R199CPXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 660µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
139W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
199mOhm @ 9.9A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (10)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCP190N60Eonsemi1 429FCP190N60EOS-NDR83,11000Similar
FCP190N65Fonsemi569FCP190N65F-NDR91,29000Similar
IRF830APBFVishay Siliconix1 711IRF830APBF-NDR64,46000Similar
IRFBC30APBFVishay Siliconix732IRFBC30APBF-NDR65,44000Similar
STP18N60M2STMicroelectronics266497-13971-5-NDR49,74000Similar
In-Stock: 507
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Not recommended for new design, minimums may apply View Substitutes
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R85,57000R85,57
50R43,70680R2 185,34
100R39,66070R3 966,07
500R32,57082R16 285,41
1 000R30,29386R30 293,86
2 000R28,38012R56 760,24
5 000R26,31107R131 555,35
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.