
IPP60R190E6XKSA1 | |
|---|---|
DigiKey Part Number | 448-IPP60R190E6XKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IPP60R190E6XKSA1 |
Description | MOSFET N-CH 600V 20.2A TO220-3 |
Customer Reference | |
Detailed Description | N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3 |
Datasheet | Datasheet |
EDA/CAD Models | IPP60R190E6XKSA1 Models |
Category | Vgs(th) (Max) @ Id 3.5V @ 630µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V |
Series | Vgs (Max) ±20V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V |
Part Status Not For New Designs | Power Dissipation (Max) 151W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 600 V | Supplier Device Package PG-TO220-3 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V |
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPP65R190E6XKSA1 | Rochester Electronics, LLC | 56 890 | 2156-IPP65R190E6XKSA1-ND | R35,01257 | Direct |
| FCP190N65F | onsemi | 569 | FCP190N65F-ND | R91,29000 | Similar |
| FCP190N65S3 | onsemi | 635 | FCP190N65S3-ND | R76,08000 | Similar |
| SIHP21N65EF-GE3 | Vishay Siliconix | 0 | SIHP21N65EF-GE3-ND | R96,69000 | Similar |
| SIHP22N60E-E3 | Vishay Siliconix | 851 | 742-SIHP22N60E-E3-ND | R86,88000 | Similar |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | R72,81000 | R72,81 |
| 50 | R36,73700 | R1 836,85 |
| 100 | R33,23570 | R3 323,57 |
| 500 | R27,09578 | R13 547,89 |
| 1 000 | R25,12330 | R25 123,30 |
| 2 000 | R23,46552 | R46 931,04 |
| 5 000 | R21,67315 | R108 365,75 |



