N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO220-3
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IPP60R165CPXKSA1

DigiKey Part Number
448-IPP60R165CPXKSA1-ND
Manufacturer
Manufacturer Product Number
IPP60R165CPXKSA1
Description
MOSFET N-CH 600V 21A TO220-3
Customer Reference
Detailed Description
N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R165CPXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 790µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
192W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
165mOhm @ 12A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (12)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCP190N60Eonsemi1 429FCP190N60EOS-NDR83,11000Direct
STP45N60DM2AGSTMicroelectronics0497-16128-5-NDR112,24000Direct
FCP165N60Eonsemi1 034FCP165N60E-NDR85,08000Similar
FCP190N65Fonsemi569FCP190N65F-NDR91,29000Similar
FCP190N65S3R0onsemi266488-FCP190N65S3R0-NDR45,65000Similar
In-Stock: 257
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Not recommended for new design, minimums may apply View Substitutes
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R96,04000R96,04
50R49,59020R2 479,51
100R45,09910R4 509,91
500R37,23272R18 616,36
1 000R34,70643R34 706,43
2 000R32,58359R65 167,18
5 000R30,28889R151 444,45
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.