N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
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IPAN65R650CEXKSA1

DigiKey Part Number
IPAN65R650CEXKSA1-ND
Manufacturer
Manufacturer Product Number
IPAN65R650CEXKSA1
Description
MOSFET N-CH 650V 10.1A TO220
Customer Reference
Detailed Description
N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Datasheet
 Datasheet
EDA/CAD Models
IPAN65R650CEXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
Base Product Number
Product Questions and Answers

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In-Stock: 14
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Not recommended for new design, minimums may apply View Substitutes
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R27,22000R27,22
50R12,94240R647,12
100R11,54770R1 154,77
500R9,09802R4 549,01
1 000R8,30958R8 309,58
2 000R7,64649R15 292,98
5 000R6,92906R34 645,30
10 000R6,87914R68 791,40
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.