N-Channel 800 V 8A (Ta) 33W (Tc) Through Hole TO-220-3F
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IPA80R650CEXKSA2

DigiKey Part Number
IPA80R650CEXKSA2-ND
Manufacturer
Manufacturer Product Number
IPA80R650CEXKSA2
Description
MOSFET N-CH 800V 8A TO220-3F
Customer Reference
Detailed Description
N-Channel 800 V 8A (Ta) 33W (Tc) Through Hole TO-220-3F
Datasheet
 Datasheet
EDA/CAD Models
IPA80R650CEXKSA2 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3F
Package / Case
Base Product Number
Product Questions and Answers

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In-Stock: 100
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Not recommended for new design, minimums may apply View Substitutes
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R45,03000R45,03
50R22,21480R1 110,74
100R20,00180R2 000,18
500R16,11806R8 059,03
1 000R14,86986R14 869,86
2 000R13,82062R27 641,24
5 000R13,74147R68 707,35
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.