N-Channel 650 V 13.8A (Tc) 32W (Tc) Through Hole PG-TO220-FP
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IPA65R280E6XKSA1

DigiKey Part Number
IPA65R280E6XKSA1-ND
Manufacturer
Manufacturer Product Number
IPA65R280E6XKSA1
Description
MOSFET N-CH 650V 13.8A TO220-FP
Customer Reference
Detailed Description
N-Channel 650 V 13.8A (Tc) 32W (Tc) Through Hole PG-TO220-FP
Datasheet
 Datasheet
EDA/CAD Models
IPA65R280E6XKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 440µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
32W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-FP
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
280mOhm @ 4.4A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (4)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
AOTF15S65LAlpha & Omega Semiconductor Inc.208785-1519-5-NDR69,37000Similar
SIHF15N65E-GE3Vishay Siliconix0SIHF15N65E-GE3-NDR33,00668Similar
STF16N65M5STMicroelectronics1 020497-8893-5-NDR69,70000Similar
TK290A65Y,S4XToshiba Semiconductor and Storage34TK290A65YS4X-NDR55,30000Similar
In-Stock: 158
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Not recommended for new design, minimums may apply View Substitutes
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R64,63000R64,63
50R32,24760R1 612,38
100R29,10620R2 910,62
500R23,59944R11 799,72
1 000R21,83016R21 830,16
2 000R20,34262R40 685,24
5 000R18,73436R93 671,80
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.